 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDW2515NZ February 2003 FDW2515NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features * 5.8 A, 20 V RDS(ON) = 28 m @ VGS = 4.5 V RDS(ON) = 38 m @ VGS = 2.5 V * Extended VGSS range (12V) for battery applications * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V * Low profile TSSOP-8 package Applications * Li-Ion Battery Pack G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 12 (Note 1a) Units V V A W C 5.8 20 1.6 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 C/W C/W Package Marking and Ordering Information Device Marking 2515NZ Device FDW2515NZ Reel Size 13'' Tape width 12mm Quantity 3000 units 2003 Fairchild Semiconductor Corporation FDW2515NZ Rev C FDW2515NZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V ID = 250 A 10 1 10 mV/C A A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, 0.6 1.0 -0.3 22 29 29 1.5 V mV/C ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 5.8 A ID = 5.0 A VGS = 2.5 V, VGS = 4.5 V, ID = 5.8 A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.8 A 10 28 38 40 m ID(on) gFS A 25 S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 745 205 115 pF pF pF f = 1.0 MHz 1.6 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 9 6 15 8 17 11 28 16 12 Ns Ns Ns Ns nC nC nC VDS = 10 V, VGS = 5 V ID = 5.8 A, 9 1.5 2.4 FDW2515NZ Rev C FDW2515NZ Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 1.3 A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage Diode Reverse Recovery Time IF = 5.8 A diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 17 1.2 (Note 2) 5 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 77C/W when mounted on a 1in2 pad of 2 oz copper b) 114C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDW2515NZ Rev C FDW2515NZ Typical Characteristics 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 VGS = 10.0V ID, DRAIN CURRENT (A) 16 2.5V VGS = 2.0V 2 4.5V 12 3.0V 2.0V 8 1.6 2.5V 3.0V 1.2 3.5V 4.5V 6.0V 10.0V 4 1.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 4 8 12 16 20 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.8A VGS = 4.5V 1.4 ID = 2.9A 0.06 0.05 1.2 0.04 TA = 125 C o 0.03 1 TA = 25oC 0.02 0.8 -50 -25 0 25 50 75 100 o 125 150 0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 20 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V ID, DRAIN CURRENT (A) 16 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 12 8 TA = 125 C 25o 4 125oC 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) o 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2515NZ Rev C FDW2515NZ Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.8A 8 VDS = 5V CAPACITANCE (pF) 1200 f = 1MHz VGS = 0 V 900 Ciss 10V 6 15V 4 600 Coss 300 Crss 2 0 0 5 10 Qg, GATE CHARGE (nC) 15 20 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT 100us ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 1 VGS = 4.5V SINGLE PULSE RJA = 114oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s DC 40 SINGLE PULSE RJA = 114C/W TA = 25C 30 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA =114 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2515NZ Rev C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
Price & Availability of FDW2515N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |